Operating Temperature:
Current - Collector (Ic) (Max):
Voltage - Collector Emitter Breakdown (Max):
DC Current Gain (hFE) (Min) @ Ic, Vce:
Frequency - Transition:
Image Part No. Manufacture Description Price MinQty. Stock Buy
MT3S113(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 5.3V 12.5GHZ SMINI
-
1 10,000 Get Quote
MT3S113(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 5.3V 12.5GHZ SMINI
-
1 10,000 Get Quote
MT3S113(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 5.3V 12.5GHZ SMINI
-
3,000 10,000 Get Quote
2SC2714-Y(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 30V 550MHZ SMINI
-
1 10,000 Get Quote
2SC2714-Y(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 30V 550MHZ SMINI
-
1 10,000 Get Quote
2SC2714-Y(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 30V 550MHZ SMINI
-
3,000 10,000 Get Quote
2SC2714-O(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 30V 550MHZ SMINI
-
1 10,000 Get Quote
2SC2714-O(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 30V 550MHZ SMINI
-
1 10,000 Get Quote
2SC2714-O(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 30V 550MHZ SMINI
-
3,000 10,000 Get Quote
2SC5084-O(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ SMINI
-
1 10,000 Get Quote
2SC5084-O(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ SMINI
-
1 10,000 Get Quote
2SC5084-O(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 12V 7GHZ SMINI
-
3,000 10,000 Get Quote
MT3S111(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 6V 11.5GHZ SMINI
-
1 10,000 Get Quote
MT3S111(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 6V 11.5GHZ SMINI
-
1 10,000 Get Quote
MT3S111(TE85L,F) Toshiba Semiconductor and Storage
RF TRANS NPN 6V 11.5GHZ SMINI
-
3,000 10,000 Get Quote
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