- Series：
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- Part Status：
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- Packaging：
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- FET Type：
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- Current - Continuous Drain (Id) @ 25°C：
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- Rds On (Max) @ Id, Vgs：
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- Vgs(th) (Max) @ Id：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Drive Voltage (Max Rds On, Min Rds On)：
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- Applied Filters :
12 records
| Image | Part No. | Manufacture | Description | Price | MinQty. | Stock | Buy |
|---|---|---|---|---|---|---|---|
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 |
-
|
1 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 |
-
|
1 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2A ES6 |
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|
4,000 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 |
-
|
1 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 |
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|
1 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.3A ES6 |
-
|
4,000 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 |
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|
1 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 |
-
|
1 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 1.4A ES6 |
-
|
4,000 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 |
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|
1 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 |
-
|
1 | 10,000 | Get Quote | |
|
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A ES6 |
-
|
1 | 10,000 | Get Quote |
