- Series:
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- Part Status:
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- Power Dissipation (Max):
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- FET Feature:
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id, Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Applied Filters :
17 records
Image | Part No. | Manufacture | Description | Price | MinQty. | Stock | Buy |
---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET N CH 600V 15.8A TO-3P(N) |
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|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-3PN |
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|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 50V 45A TO-3PN |
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|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 60A TO-3PN |
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|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 30A TO-3PN |
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|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 900V 3A TO-3PN |
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|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 800V TO-3PN |
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|
25 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 20A TO-3PN |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-3P(N) |
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|
25 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 12A TO-3PN |
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|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A TO-3P |
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|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N CH 600V 61.8A TO-3P(N) |
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|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N CH 600V 38.8A TO-3P(N) |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 15A TO-3PN |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 900V TO-3PN |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N CH 600V 30.8A TO-3P(N) |
-
|
1 | 10,000 | Get Quote |