Series:
Operating Temperature:
Power Dissipation (Max):
FET Type:
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Drive Voltage (Max Rds On, Min Rds On):
Vgs (Max):
Image Part No. Manufacture Description Price MinQty. Stock Buy
2SK3670,F(M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK3670,F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK3670(T6CANO,F,M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK3670(T6CANO,A,F Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK4093TZ-E Renesas Electronics America
MOSFET N-CH 250V 1A TO-92
-
1 10,000 Get Quote
2SK3670(F,M) Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2989,T6F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2989,F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2989(TPE6,F,M) Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2989(T6CANO,F,M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2989(T6CANO,A,F Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2962,T6WNLF(M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2962,T6WNLF(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2962,T6F(M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2962,T6F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2962,F(J Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2962(TE6,F,M) Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2962(T6CANO,F,M Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
2SK2962(T6CANO,A,F Toshiba Semiconductor and Storage
MOSFET N-CH
-
1 10,000 Get Quote
RJK6011DJE-00#Z0 Renesas Electronics America
MOSFET N-CH 600V 0.1A TO92
-
1 10,000 Get Quote
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