Current - Average Rectified (Io):
Current - Reverse Leakage @ Vr:
Voltage - DC Reverse (Vr) (Max):
Reverse Recovery Time (trr):
Operating Temperature - Junction:
Capacitance @ Vr, F:
Image Part No. Manufacture Description Price MinQty. Stock Buy
ES3JBHM4G TSC (Taiwan Semiconductor)
DIODE GEN PURP 600V 3A DO214AA
-
6,000 10,000 Get Quote
MURS360SHE3_A/I Vishay / Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.5A DO214AA
-
3,200 10,000 Get Quote
MURS360SHE3_A/H Vishay / Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.5A DO214AA
-
2,250 10,000 Get Quote
MURS340SHE3_A/H Vishay / Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
-
2,250 10,000 Get Quote
MURS340SHE3_A/I Vishay / Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
-
1 10,000 Get Quote
MURS340SHE3_A/I Vishay / Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
-
1 10,000 Get Quote
MURS340SHE3_A/I Vishay / Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
-
3,200 10,000 Get Quote
ES3JBHR5G TSC (Taiwan Semiconductor)
DIODE GEN PURP 600V 3A DO214AA
-
1 10,000 Get Quote
ES3JBHR5G TSC (Taiwan Semiconductor)
DIODE GEN PURP 600V 3A DO214AA
-
1 10,000 Get Quote
ES3JBHR5G TSC (Taiwan Semiconductor)
DIODE GEN PURP 600V 3A DO214AA
-
850 10,000 Get Quote
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