Transistors - Bipolar (BJT) - RF - Asourcing Electronics

Packaging：

Power - Max：

Current - Collector (Ic) (Max)：

Voltage - Collector Emitter Breakdown (Max)：

DC Current Gain (hFE) (Min) @ Ic, Vce：

Frequency - Transition：

Noise Figure (dB Typ @ f)：

Gain：

Applied Filters :

9 records

Part No.	Manufacture	Description	Price	MinQty.	Stock	Buy
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 6V 8GHZ PW-MINI	-	1	10,000	Get Quote
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 6V 8GHZ PW-MINI	-	1	10,000	Get Quote
MT3S111P(TE12L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 6V 8GHZ PW-MINI	-	1,000	10,000	Get Quote
MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 12V 7GHZ PW-MINI	-	1	10,000	Get Quote
MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 12V 7GHZ PW-MINI	-	1	10,000	Get Quote
MT3S20P(TE12L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 12V 7GHZ PW-MINI	-	1,000	10,000	Get Quote
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 7.7GHZ PW-MINI	-	1	10,000	Get Quote
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 7.7GHZ PW-MINI	-	1	10,000	Get Quote
MT3S113P(TE12L,F)	Toshiba Semiconductor and Storage	RF TRANS NPN 5.3V 7.7GHZ PW-MINI	-	1,000	10,000	Get Quote

Page 1 / 1