Transistors - Bipolar (BJT) - Single, Pre-Biased

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Transistors - Bipolar (BJT) - Single, Pre-Biased
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Resistor - Emitter Base (R2) : 1 kOhms
Power - Max : 500mW

2 records

Image	Part No.	Manufacture	Description	Price	MinQty.	Stock	Buy
	PDTD113ES,126	NXP Semiconductors / Freescale	TRANS PREBIAS NPN 500MW TO92-3	-	1	10,000	Get Quote
	PDTB113ES,126	NXP Semiconductors / Freescale	TRANS PREBIAS PNP 500MW TO92-3	-	1	10,000	Get Quote

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