Packaging:
Power Dissipation (Max):
Drain to Source Voltage (Vdss):
Current - Continuous Drain (Id) @ 25°C:
Rds On (Max) @ Id, Vgs:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part No. Manufacture Description Price MinQty. Stock Buy
2SJ380(F) Toshiba Semiconductor and Storage
MOSFET P-CH 100V 12A TO220NIS
-
1 10,000 Get Quote
2SJ304(F) Toshiba Semiconductor and Storage
MOSFET P-CH 60V 14A TO220NIS
-
1 10,000 Get Quote
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