- Operating Temperature:
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- Mounting Type:
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- Package / Case:
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- Supplier Device Package:
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- Power Dissipation (Max):
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- FET Feature:
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- Current - Continuous Drain (Id) @ 25°C:
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- Rds On (Max) @ Id, Vgs:
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- Vgs(th) (Max) @ Id:
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- Gate Charge (Qg) (Max) @ Vgs:
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- Input Capacitance (Ciss) (Max) @ Vds:
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- Applied Filters :
14 records
Image | Part No. | Manufacture | Description | Price | MinQty. | Stock | Buy |
---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB |
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|
50 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR |
-
|
2,500 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-220 |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A 5DFN |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A 5DFN |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A 5DFN |
-
|
2,500 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 38.8A TO-247 |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO247 |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-3PN |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220AB |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 61.8A TO-247 |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 30.8A TO-247 |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-220SIS |
-
|
1 | 10,000 | Get Quote | ||
Toshiba Semiconductor and Storage | MOSFET N-CH 600V 25A TO-247 |
-
|
1 | 10,000 | Get Quote |