Power Dissipation (Max):
Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Image Part No. Manufacture Description Price MinQty. Stock Buy
2SK3565(Q,M) Toshiba Semiconductor and Storage
MOSFET N-CH 900V 5A TO-220SIS
-
1 10,000 Get Quote
2SK3566(STA4,Q,M) Toshiba Semiconductor and Storage
MOSFET N-CH 900V 2.5A TO-220SIS
-
1 10,000 Get Quote
2SK3564(STA4,Q,M) Toshiba Semiconductor and Storage
MOSFET N-CH 900V 3A TO-220SIS
-
1 10,000 Get Quote
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