Product Overview
- Part Number
- JAN1N5809US
- Quantity Available
- 10,000
- Manufacturer
- Microsemi
- Catalog
- Diodes - Rectifiers - Single
- Description
- DIODE GEN PURP 100V 6A B-MELF
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Documents & Media
- Datasheets
- JAN1N5809US
Product Attributes
- Capacitance @ Vr, F :
- 60pF @ 10V, 1MHz
- Current - Average Rectified (Io) :
- 6A
- Current - Reverse Leakage @ Vr :
- 5µA @ 100V
- Diode Type :
- Standard
- Mounting Type :
- Surface Mount
- Operating Temperature - Junction :
- -65°C ~ 175°C
- Package / Case :
- SQ-MELF, B
- Packaging :
- Bulk
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- 30ns
- Series :
- Military, MIL-PRF-19500/477
- Speed :
- Fast Recovery = 200mA (Io)
- Supplier Device Package :
- B, SQ-MELF
- Voltage - DC Reverse (Vr) (Max) :
- 100V
- Voltage - Forward (Vf) (Max) @ If :
- 875mV @ 4A
Description
Certifications
BOM / PCB/ SMT
Our Benefits
ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.
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