Product Overview

Part Number
RN1106MFV(TL3,T)
Quantity Available
10,000
Manufacturer
Toshiba Semiconductor and Storage
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Description
TRANS PREBIAS NPN 0.15W VESM

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Documents & Media

Datasheets
RN1106MFV(TL3,T)

Product Attributes

Current - Collector (Ic) (Max) :
100mA
Current - Collector Cutoff (Max) :
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Frequency - Transition :
-
Mounting Type :
Surface Mount
Package / Case :
SOT-723
Packaging :
Cut Tape (CT)
Part Status :
Obsolete
Power - Max :
150mW
Resistor - Base (R1) :
4.7 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
Series :
-
Supplier Device Package :
VESM
Transistor Type :
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic :
300mV @ 500µA, 5mA
Voltage - Collector Emitter Breakdown (Max) :
50V

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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