Product Overview

Part Number
EPC2035
Quantity Available
10,000
Manufacturer
EPC
Catalog
Transistors - FETs, MOSFETs - Single
Description
GANFET TRANS 60V 1A BUMPED DIE

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Documents & Media

Datasheets
EPC2035

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
1A (Ta)
Drain to Source Voltage (Vdss) :
60V
Drive Voltage (Max Rds On, Min Rds On) :
5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
1.15nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
115pF @ 30V
Mounting Type :
Surface Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
Die
Packaging :
Cut Tape (CT)
Part Status :
Active
Power Dissipation (Max) :
-
Rds On (Max) @ Id, Vgs :
45mOhm @ 1A, 5V
Series :
eGaN®
Supplier Device Package :
Die
Technology :
GaNFET (Gallium Nitride)
Vgs (Max) :
+6V, -4V
Vgs(th) (Max) @ Id :
2.5V @ 800µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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