Product Overview

Part Number
TPN13008NH,L1Q
Quantity Available
10,000
Manufacturer
Toshiba Semiconductor and Storage
Catalog
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 80V 40A 8TSON

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Documents & Media

Datasheets
TPN13008NH,L1Q

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
18A (Tc)
Drain to Source Voltage (Vdss) :
80V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 40V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
8-PowerVDFN
Packaging :
Digi-Reel®
Part Status :
Active
Power Dissipation (Max) :
700mW (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs :
13.3mOhm @ 9A, 10V
Series :
U-MOSVIII-H
Supplier Device Package :
8-TSON Advance (3.3x3.3)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 200µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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