Product Overview

Part Number
NTMD6N02R2G
Quantity Available
10,000
Manufacturer
AMI Semiconductor / ON Semiconductor
Catalog
Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 3.92A 8SO

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Documents & Media

Datasheets
NTMD6N02R2G

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
3.92A
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1100pF @ 16V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Packaging :
Tape & Reel (TR)
Part Status :
Active
Power - Max :
730mW
Rds On (Max) @ Id, Vgs :
35mOhm @ 6A, 4.5V
Series :
-
Supplier Device Package :
8-SOIC
Vgs(th) (Max) @ Id :
1.2V @ 250µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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