Product Overview

Part Number
SI4936BDY-T1-E3
Quantity Available
10,000
Manufacturer
Vishay / Siliconix
Catalog
Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 6.9A 8-SOIC

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Documents & Media

Datasheets
SI4936BDY-T1-E3

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
6.9A
Drain to Source Voltage (Vdss) :
30V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
530pF @ 15V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Packaging :
Digi-Reel®
Part Status :
Active
Power - Max :
2.8W
Rds On (Max) @ Id, Vgs :
35mOhm @ 5.9A, 10V
Series :
TrenchFET®
Supplier Device Package :
8-SO
Vgs(th) (Max) @ Id :
3V @ 250µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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