Product Overview

Part Number
PMDPB38UNE,115
Quantity Available
10,000
Manufacturer
NXP Semiconductors / Freescale
Catalog
Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 20V 4A HUSON6

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Documents & Media

Datasheets
PMDPB38UNE,115

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
4A
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :
4.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
268pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
6-UDFN Exposed Pad
Packaging :
Cut Tape (CT)
Part Status :
Obsolete
Power - Max :
510mW
Rds On (Max) @ Id, Vgs :
46mOhm @ 3A, 4.5V
Series :
-
Supplier Device Package :
DFN2020-6
Vgs(th) (Max) @ Id :
1V @ 250µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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