Product Overview

Part Number
STD1HN60K3
Quantity Available
10,000
Manufacturer
STMicroelectronics
Catalog
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 600V 1.2A DPAK

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Documents & Media

Datasheets
STD1HN60K3

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
1.2A (Tc)
Drain to Source Voltage (Vdss) :
600V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
9.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 50V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging :
Digi-Reel®
Part Status :
Discontinued at Digi-Key
Power Dissipation (Max) :
27W (Tc)
Rds On (Max) @ Id, Vgs :
8Ohm @ 600mA, 10V
Series :
SuperMESH3™
Supplier Device Package :
DPAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4.5V @ 50µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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