Product Overview

Part Number
SI7317DN-T1-GE3
Quantity Available
10,000
Manufacturer
Vishay / Siliconix
Catalog
Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 150V 2.8A 1212-8

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Documents & Media

Datasheets
SI7317DN-T1-GE3

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
2.8A (Tc)
Drain to Source Voltage (Vdss) :
150V
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
9.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
365pF @ 75V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
PowerPAK® 1212-8
Packaging :
Cut Tape (CT)
Part Status :
Active
Power Dissipation (Max) :
3.2W (Ta), 19.8W (Tc)
Rds On (Max) @ Id, Vgs :
1.2Ohm @ 500mA, 10V
Series :
TrenchFET®
Supplier Device Package :
PowerPAK® 1212-8
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4.5V @ 250µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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