Product Overview

Part Number
STB7NK80Z-1
Quantity Available
10,000
Manufacturer
STMicroelectronics
Catalog
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 800V 5.2A I2PAK

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Documents & Media

Datasheets
STB7NK80Z-1

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
5.2A (Tc)
Drain to Source Voltage (Vdss) :
800V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1138pF @ 25V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging :
Tube
Part Status :
Active
Power Dissipation (Max) :
125W (Tc)
Rds On (Max) @ Id, Vgs :
1.8Ohm @ 2.6A, 10V
Series :
SuperMESH™
Supplier Device Package :
I2PAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
4.5V @ 100µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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