Product Overview
- Part Number
- TK12E60W,S1VX
- Quantity Available
- 10,000
- Manufacturer
- Toshiba Semiconductor and Storage
- Description
- MOSFET N CH 600V 11.5A TO-220
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Documents & Media
- Datasheets
- TK12E60W,S1VX
Product Attributes
- Current - Continuous Drain (Id) @ 25°C :
- 11.5A (Ta)
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- Super Junction
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 890pF @ 300V
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Part Status :
- Active
- Power Dissipation (Max) :
- 110W (Tc)
- Rds On (Max) @ Id, Vgs :
- 300mOhm @ 5.8A, 10V
- Series :
- DTMOSIV
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 3.7V @ 600µA
Description
Certifications
BOM / PCB/ SMT
Our Benefits
ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.
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