Product Overview

Part Number
IPP65R660CFDAAKSA1
Quantity Available
10,000
Manufacturer
International Rectifier (Infineon Technologies)
Catalog
Transistors - FETs, MOSFETs - Single
Description
MOSFET N-CH 650V TO-220-3

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Documents & Media

Datasheets
IPP65R660CFDAAKSA1

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
6A (Tc)
Drain to Source Voltage (Vdss) :
650V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
543pF @ 100V
Mounting Type :
Through Hole
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
TO-220-3
Packaging :
Tube
Part Status :
Obsolete
Power Dissipation (Max) :
62.5W (Tc)
Rds On (Max) @ Id, Vgs :
660mOhm @ 3.2A, 10V
Series :
Automotive, AEC-Q101, CoolMOS™
Supplier Device Package :
PG-TO220-3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4.5V @ 200µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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