IRFR5505TRPBF Infineon Mosfet 55V 18A TO-252
IRFR5505TRPBF Infineon Transistors Original Label
⑴ Product Number: IRFR5505TRPBF
⑵ IRFR5505TRPBF Manufacturer: Infineon Technologies
⑷ Description: P-Channel 55V 18A (Tc) 57W (Tc) Surface Mount D-Pak
⑸ Datasheet: https://bit.ly/3DHnph7
⑹ FET Type: P-Channel
⑺ Technology: MOSFET (Metal Oxide)
⑻ Drain to Source Voltage (Vdss): 55V
⑼ Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
⑾ Power Dissipation (Max): 57W (Tc)
⑿ Mounting Type: Surface Mount
⒀ Package / Case: TO-252-3
⒁ ase Product Number: IRFR5505
⒂ RoHS Status: ROHS3 Compliant
• Ultra-Low On-Resistance
• Surface Mount (IRFR5505)
• Straight Lead (lRFU5505)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
IRFR5505TRPBF Infineon Transistors Supplier
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
IRFR5505TRPBF Infineon Transistors Supplier in China
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