Product Overview

Part Number
1N8026-GA
Quantity Available
10,000
Manufacturer
GeneSiC Semiconductor
Catalog
Diodes - Rectifiers - Single
Description
DIODE SILICON 1.2KV 8A TO257

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Documents & Media

Datasheets
1N8026-GA

Product Attributes

Capacitance @ Vr, F :
237pF @ 1V, 1MHz
Current - Average Rectified (Io) :
8A (DC)
Current - Reverse Leakage @ Vr :
10µA @ 1200V
Diode Type :
Silicon Carbide Schottky
Mounting Type :
Through Hole
Operating Temperature - Junction :
-55°C ~ 250°C
Package / Case :
TO-257-3
Packaging :
Tube
Part Status :
Obsolete
Reverse Recovery Time (trr) :
0ns
Series :
-
Speed :
No Recovery Time > 500mA (Io)
Supplier Device Package :
TO-257
Voltage - DC Reverse (Vr) (Max) :
1200V
Voltage - Forward (Vf) (Max) @ If :
1.6V @ 2.5A

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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