Datasheets

GA50JT06-258

Current - Continuous Drain (Id) @ 25°C :

100A (Tc)

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

-

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 225°C (TJ)

Package / Case :

TO-258-3, TO-258AA

Packaging :

Bulk

Part Status :

Active

Power Dissipation (Max) :

769W (Tc)

Rds On (Max) @ Id, Vgs :

25mOhm @ 50A

Series :

-

Supplier Device Package :

TO-258

Technology :

SiC (Silicon Carbide Junction Transistor)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-