Product Overview
- Part Number
- TPD3215M
- Quantity Available
- 10,000
- Manufacturer
- Transphorm
- Description
- GANFET 2N-CH 600V 70A MODULE
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Documents & Media
- Datasheets
- TPD3215M
Product Attributes
- Current - Continuous Drain (Id) @ 25°C :
- 70A (Tc)
- Drain to Source Voltage (Vdss) :
- 600V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2260pF @ 100V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Packaging :
- Bulk
- Part Status :
- Obsolete
- Power - Max :
- 470W
- Rds On (Max) @ Id, Vgs :
- 34mOhm @ 30A, 8V
- Series :
- -
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- -
Description
Certifications
BOM / PCB/ SMT
Our Benefits
ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.
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