Product Overview

Part Number
APTM100A13DG
Quantity Available
10,000
Manufacturer
Microsemi
Catalog
Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 1000V 65A SP6

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Documents & Media

Datasheets
APTM100A13DG

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
65A
Drain to Source Voltage (Vdss) :
1000V (1kV)
FET Feature :
Standard
FET Type :
2 N-Channel (Half Bridge)
Gate Charge (Qg) (Max) @ Vgs :
562nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
15200pF @ 25V
Mounting Type :
Chassis Mount
Operating Temperature :
-40°C ~ 150°C (TJ)
Package / Case :
SP6
Packaging :
Bulk
Part Status :
Active
Power - Max :
1250W
Rds On (Max) @ Id, Vgs :
156mOhm @ 32.5A, 10V
Series :
-
Supplier Device Package :
SP6
Vgs(th) (Max) @ Id :
5V @ 6mA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

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