Datasheets

SIHU2N80E-GE3

Current - Continuous Drain (Id) @ 25°C :

2.8A (Tc)

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

19.6nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

315pF @ 100V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-251-3 Long Leads, IPak, TO-251AB

Packaging :

Tube

Part Status :

Active

Power Dissipation (Max) :

62.5W (Tc)

Rds On (Max) @ Id, Vgs :

2.75Ohm @ 1A, 10V

Series :

E

Supplier Device Package :

IPAK (TO-251)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA