Product Overview

Part Number
SI7703EDN-T1-GE3
Quantity Available
10,000
Manufacturer
Vishay / Siliconix
Catalog
Transistors - FETs, MOSFETs - Single
Description
MOSFET P-CH 20V 4.3A 1212-8 PPAK

Get Quote

Documents & Media

Datasheets
SI7703EDN-T1-GE3

Product Attributes

Current - Continuous Drain (Id) @ 25°C :
4.3A (Ta)
Drain to Source Voltage (Vdss) :
20V
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 4.5V
FET Feature :
Schottky Diode (Isolated)
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
PowerPAK® 1212-8
Packaging :
Tape & Reel (TR)
Part Status :
Obsolete
Power Dissipation (Max) :
1.3W (Ta)
Rds On (Max) @ Id, Vgs :
48mOhm @ 6.3A, 4.5V
Series :
TrenchFET®
Supplier Device Package :
PowerPAK® 1212-8
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±12V
Vgs(th) (Max) @ Id :
1V @ 800µA

Description

Certifications

BOM / PCB/ SMT

Our Benefits

ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.

Customer reviews

Loading...