Product Overview
- Part Number
- SI7703EDN-T1-GE3
- Quantity Available
- 10,000
- Manufacturer
- Vishay / Siliconix
- Description
- MOSFET P-CH 20V 4.3A 1212-8 PPAK
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Documents & Media
- Datasheets
- SI7703EDN-T1-GE3
Product Attributes
- Current - Continuous Drain (Id) @ 25°C :
- 4.3A (Ta)
- Drain to Source Voltage (Vdss) :
- 20V
- Drive Voltage (Max Rds On, Min Rds On) :
- 1.8V, 4.5V
- FET Feature :
- Schottky Diode (Isolated)
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds :
- -
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- PowerPAK® 1212-8
- Packaging :
- Tape & Reel (TR)
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 1.3W (Ta)
- Rds On (Max) @ Id, Vgs :
- 48mOhm @ 6.3A, 4.5V
- Series :
- TrenchFET®
- Supplier Device Package :
- PowerPAK® 1212-8
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1V @ 800µA
Description
Certifications
BOM / PCB/ SMT
Our Benefits
ONE STOP SERVICE
BOM + PCB + SMT/DIP
LOW MOQ
Benefit from the lowest MOQ of 1 PCS that makes your business more flexible.
COMPETITIVE PRICE
Best prices from the original factory to improve your profit margin. 3% off for your first order.
AFTER-SALES SERVICE
400-days warranty. All defective products could be returned and replaced freely as soon as possible.
IN-TIME DELIVERY
Normal orders would be sent within 4 hours after you send the PO.
Customer reviews
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